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对含 F MOS结构的抗电离辐射特性和机理进行了系统研究。其结果表明 :F减少工艺过程引入栅介质的 E’中心缺陷和补偿 Si/ Si O2 界面 Si悬挂键的作用 ,将导致初始氧化物电荷和界面态密度的下降 ;栅 Si O2 中的 F主要以 F离子和 Si- F结键的方式存在 ;含 F栅介质中部分 Si- F键替换 Si- O应力键而使 Si/ Si O2 界面应力得到释放 ,以及用较高键能的 Si- F键替换 Si- H弱键的有益作用是栅介质辐射敏感性降低的根本原因 ;含 F CMOS电路辐射感生漏电流得到抑制的主要原因是场氧介质中氧化物电荷的增长受到了明显抑制。
The anti-ionizing radiation characteristics and mechanism of F MOS-containing structures were studied systematically. The results show that: F reduces the E ’center defect introduced into the gate dielectric and compensates for the Si dangling bond at the Si / Si O2 interface in the process, which leads to the decrease of the initial oxide charge and interface state density; F ions and Si-F bonds exist; the partial Si-F bonds in the F-containing medium replace the Si-O stress bonds to release the Si / Si O2 interface stress, and the Si-F bonds with higher bond energy The beneficial effect of substituting Si-H weak bonds is the fundamental reason for the decrease of radiation sensitivity of gate dielectric. The main reason for suppressing the induced leakage current of F CMOS circuit is that the growth of oxide charge in field oxygen is significantly inhibited.