Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE(GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy.An abno
Amorphous silicon films are prepared at lower temperature of 350℃by new catalyticchemical vapor deposition method.In the method,material gases (SiH4 and H2)are
Till now a laser rangefinder has been used to find the range of a stationary target or the variations and deformities of a plane surface like in the manufacturi
By use of finite-difference time-domain(FDTD)method,an eignmode analysis in a multiwaveguide structure is presented.Because of difference in propagation constan
An amorphous silicon 16-bit array photodetector with the a-SiC/a-Si heterojunction diode is presented.The fabrication processes of the device were studied syste