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最近ISSCC(国际固态线路会议)上宣布,速度低于50 ns的存储器有希望用两种MOS工艺来做。这就预示静态MOS随机存储器侵入了被双极随机存储器所占据的高速缓存的领域。二月间,在费城召开的国际固态线路会议上,有两个公司宣布了两种新的MOS工艺。Intel Corp.使用的是先进的氧化隔离工艺,而American Microsy-stems Inc.则报导用他们的V型槽工艺。主存主要是用150 ns～300 ns周期的动态MOSRAM,而缓存系统几乎被静态双极RAM所独占。在30多种256单元和1024单元的TTL器件和ECL器件做成的RAM中,美国加州的仙童半导体公司(Fair-child Semiconductor,Mt.View,Calif.)主要提供了这种RAM。至于用在缓存的MOS器件现在唯一可得到的是Intel Corp、的2115和2125,速度为70 ns,这也仅用于最慢的系统中。
Recently announced at the ISSCC (International Solid-State Line Conference) that memory speeds of less than 50 ns are promising for two MOS processes. This indicates that static MOS random memory invades the field of caching occupied by bipolar random access memory. In February, two companies announced two new MOS processes at the International Solid State Circuit Conference in Philadelphia. Intel Corp. uses advanced oxide isolation processes, while American Microsystems reports using their V-groove process. Main memory is mainly used in 150 ns ~ 300 ns cycle of dynamic MOSRAM, and cache system is almost exclusively static bipolar RAM. Fairchild Semiconductor (CA.) Calif., Calif., Primarily provides this type of RAM in more than 30 256-element and 1024-element TTL devices and ECL devices. The only available now for cached MOS devices is the Intel Corp, the 2115 and the 2125, which run at 70 ns, which is only used in the slowest systems.