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1984年固体器件与材料国际会议(1984 1CSSDM)于8月30日至9月1日在日本神户举行。会议的中心内容是有关半导体的新材料、新器件、新水平、新工艺及新原理的探讨,充分反映出半导体领域中正在发展的或行将发展的各个重大技术方面,而不偏重于实用化成果或产品的介绍,因而引起各国学者的较大兴趣,也给予我们较多的启发。除日本外,美、英、法、苏、联邦德国、荷兰、芬兰、民主德国、印度及我国(包括台湾省)都有专家参加,共七百余人。会上共宣读了230余篇论文(包括29篇特邀报告)。三天会议,除开幕式外,同时分四个会场进行论文宣读和讨论,按29个专题共举行47场次(包括3次专题讨论)。内容主要包括:体材料生长,器件工艺、物理分析,硅LSI与VLSI,砷化镓FET与LSI,高速异质结器件,高电子迁移率晶体管(HEMT)LSI与MISFET,半导体激光器,光电探测器,光电子
The 1984 International Conference on Solid-State Devices and Materials (1984 1CSSDM) was held in Kobe, Japan, from August 30 to September 1. At the center of the conference are discussions on new materials, devices, new levels, new processes and new principles of semiconductors, which fully reflect the major technical aspects that are developing or are going to be developed in the field of semiconductors, rather than focusing on practical results Or product introduction, which aroused great interest of scholars from all countries, but also give us more inspiration. Except Japan, there are more than 700 experts from the United States, Britain, France, the Soviet Union, the Federal Republic of Germany, the Netherlands, Finland, Germany, Germany, India and China (including Taiwan). Over 230 papers (including 29 special reports) were read at the conference. In addition to the opening ceremony, the three-day conference also read and discussed the dissertation in four venues. A total of 47 sessions (including three symposia) were held on 29 thematic topics. The main contents include: material growth, device technology, physical analysis, silicon LSI and VLSI, gallium arsenide FET and LSI, high speed heterojunction devices, high electron mobility transistor (HEMT) LSI and MISFET, semiconductor lasers, photodetectors , Photoelectron