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本文针对现代LED驱动芯片对高压元器件的需要,结合SOI衬底技术在功率集成电路上的优势,分析了SOI高压器件的耐压原理,提出500V级SOI高压器件设计方案。在SOI衬底上设计了具有40μm线性渐变掺杂漂移区的LDMOS结构,对器件性能进行了仿真,并开发了与CMOS工艺兼容的制备流程。成功进行实验,测试结果显示,器件击穿电压可达550V,比导通电阻为5.8Ω·mm2。
In this paper, according to the needs of high-voltage components for modern LED driver chips and the advantages of SOI substrate technology on power integrated circuits, the voltage-withstand principle of SOI high-voltage devices is analyzed and the design scheme of 500V SOI high-voltage devices is proposed. An LDMOS structure with a 40μm linearly graded doped drift region was designed on the SOI substrate. The performance of the device was simulated and a fabrication process compatible with the CMOS process was developed. The successful experiment, the test results show that the device breakdown voltage up to 550V, than the on-resistance of 5.8Ω · mm2.