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在氩气气氛及真空环境下生长的高阻区熔硅单晶的径向少子寿命分布情况进行了检测。检测结果表明,在氩气气氛下生长的各种规格的高阻单晶,其少子寿命一般都在1 000μs以上,且径向变化大部分在10%以内,当生长工艺参数改变时,单晶少子寿命的径向分布规律虽然会有所不同,但对少子寿命径向均匀性的影响却几乎可以忽略。而在真空环境、不同工艺参数下生长的单晶,其少子寿命的径向分布及均匀性的变化则十分的明显,还会经常看到中心少子寿命400~500μs、边缘区域少子寿命高于1 000μs的单晶。本文在单晶生长试验的基础上,通过对产生这种现象的原因进行分析,确定了采用适当地降低晶体生长速率、提高加热功率的方法,可以使高阻真空区熔硅单晶中心区域的少子寿命的提高,并使其径向分布变均匀。
The radial minority lifetime distribution of high-resistance fused silicon single crystal grown in argon atmosphere and vacuum environment was tested. The results show that the growth of a variety of high-impedance single crystal under argon atmosphere, its minority lifetime are generally more than 1000μs, and most of the radial variation within 10%, when the growth process parameters change, single crystal Although the law of radial distribution of young children’s life will be different, the influence on radial uniformity of fewer children’s life is almost negligible. However, the growth of single crystal under vacuum environment and different process parameters is very obvious. The radial distribution and uniformity of minority carriers are very obvious, and the lifetime of central minority carriers is often seen as 400-500μs. The lifetime of minority carriers in edge regions is higher than 1 000μs single crystal. Based on the single crystal growth test, the reason of this phenomenon is analyzed, and the method of reducing the crystal growth rate and increasing the heating power is determined, which can make the central region Fewer children to improve life, and make its radial distribution becomes uniform.