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随着晶片尺寸的不断增大,精准控制单片湿法腐蚀速率及非均匀性变得越来越具有挑战性。主要研究了300 mm单片湿法腐蚀工艺过程中,喷射稀释氢氟酸时卡盘的旋转速度和喷淋臂摆动方式对晶片表面腐蚀性的影响。结果表明,随着卡盘旋转速度的增大,腐蚀速率从1.02 nm/min线性提高到1.06 nm/min,腐蚀速率的非均匀性先是迅速降低,但当转速高于150 r/min后,基本保持在2.70%。喷淋臂在晶片中心定点喷射、匀速摆动和呈抛物线型摆动时,晶片腐蚀速率都约为1 nm/min,腐蚀速率均沿晶片中心到边缘径向降低,与定点喷射相比,喷淋臂在晶片表面摆动后,腐蚀速率的非均匀性明显降低,且抛物线摆动低于匀速摆动,达到1.48%。
As wafer dimensions continue to grow, it is becoming more challenging to precisely control the wet etching rate and non-uniformity of the monolithic wafer. Mainly studied the 300 mm monolithic wet etching process, the jet dilute hydrofluoric acid when the chuck rotating speed and spray arm swing mode on the surface of the wafer corrosive. The results show that with the increase of chuck rotation speed, the corrosion rate increases linearly from 1.02 nm / min to 1.06 nm / min and the corrosion rate non-uniformity first decreases rapidly. However, when the rotating speed is higher than 150 r / min, Maintained at 2.70%. Spray arm at the center of the wafer jet, a uniform swing and a parabolic swing, the wafer corrosion rate is about 1 nm / min, the corrosion rate along the wafer center to the edge of the radial decrease, compared with the fixed-point jet, spray arm After the wafer surface wobbles, the nonuniformity of the corrosion rate is significantly reduced, and the parabola swing is lower than the uniform swing, reaching 1.48%.