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采用阴极磁控溅射法 ,在不同基片温度 (180～ 30 0℃ )条件下镀覆铟锡氧化物 (ITO)透明导电膜 .由X射线衍射分析试样结构随温度的变化 ,并测试了样品的方块电阻、电阻率、Hall迁移率、载流子浓度等电性能和膜层的可见光透过率 .基片温度为 180℃时 ,ITO膜 (2 2 2 )衍射峰很强 ,具有 [111]方向择优取向 ;随温度的升高 ,(40 0 )、(44 0 )衍射峰增强 ,晶面随机取向增加 ,同时晶粒变大 ,电阻率降低 .30 0℃时晶粒尺寸为 43 .5nm ,电阻率为 6 .8× 10 - 5 Ω·cm .
Cathode magnetron sputtering was used to deposit indium tin oxide (ITO) transparent conductive film under different substrate temperature (180 ~ 300 ℃), the structure of the sample was analyzed by X-ray diffraction The sheet resistance, resistivity, Hall mobility, carrier concentration and other properties of the sample and the visible light transmittance of the film when the substrate temperature is 180 ℃, the ITO film (2 2 2) diffraction peak is strong, with (111) direction. With the increase of temperature, the (40 0) and (44 0) diffraction peaks increase and the random orientation of the crystal plane increases. Meanwhile, the grain size increases and the resistivity decreases. The grain size at 300 ℃ is 43 .5nm, resistivity of 6. 8 × 10 - 5 Ω · cm.