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报道了采用物理气相传输(PVT)法进行SiC单晶生长方面取得的最新进展,成功研制得到固态微波器件急需的3英寸(75 mm)半绝缘4H-SiC衬底。使用计算机模拟技术,进行了3英寸(75 mm)4H-SiC晶体生长的热场设计,并在此基础上研制出适合3英寸(75 mm)4H-SiC PVT生长的晶体生长设备,采用喇曼光谱对晶体生长表面5点进行测试,结果均为单一的4H晶型,采用非接触电阻率面分布(COREMA)方法测得晶片电阻率为109~1012Ω.cm。微管道缺陷(MPD)测量采用熔融KOH腐蚀法,测得平均微管道密度为104个/cm2,其中晶片的30%区域微管道缺陷小于10个/cm2。使用X射线双晶衍射测试得到其半高宽(FWHM)为31 arcsec,说明所获得的晶体具有良好的结晶完整性。
The recent progress in the growth of SiC single crystals by physical vapor deposition (PVT) was reported. A 3-inch (75 mm) semi-insulating 4H-SiC substrate, which was urgently needed for solid-state microwave devices, was successfully developed. The thermal field design of 3-inch (75 mm) 4H-SiC crystal growth was carried out by using computer simulation technology. Based on this, a crystal growth apparatus suitable for 3-inch (75 mm) 4H-SiC PVT growth was developed. Raman Spectra were used to test 5 points on the crystal growth surface. The results were single 4H crystal. The resistivity of the wafer measured by COREMA was 109 ~ 1012 Ω · cm. Micro-tube defect (MPD) measurement using molten KOH etching method, the average micro-tube density measured 104 / cm2, 30% of the area where the micro-channel defects less than 10 / cm2. The full width at half maximum (FWHM) was 31 arcsec using an X-ray twin crystal diffraction test, indicating that the obtained crystals have good crystalline integrity.