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本文采用微波等离子体化学气相沉积方法（MWPCVD），以C60膜作为过渡层，在石英（StO2）衬底表面，首次在等离子体预处理中无衬底负偏压条件下生长出金刚石晶粒。通过扫描电镜观察到金刚石晶粒呈菜花关，生长表面为（100）晶面。
In this paper, MWPCVD was used to grow diamond grains under the condition of no substrate negative bias in the plasma pretreatment on the surface of quartz substrate. The diamond grains were found cauliflower by scanning electron microscopy, and the growth surface was (100) crystal plane.