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对N型[111]晶向直拉硅样品进行电子辐照,然后在不同温度下进行常规热处理,对比研究了不同辐照剂量的样品少子寿命和电阻率随退火温度的变化。结果表明:直拉硅单晶样品经电子辐照后电阻率增加,少子寿命下降,辐照剂量越高电阻率增加的越多,少子寿命下降越明显。对辐照样品进行不同温度热处理发现热处理温度低于600℃,少子寿命基本处于稳定值,当退火温度达到650℃时,辐照样品的电阻率与少子寿命均恢复至辐照前的初始值,表明在该温度下辐照引入的缺陷基本消除,因此晶体的导电能力逐渐恢复。而经750℃热处理后,辐照样品的少子寿命和电阻率分别出现一个低谷,辐照剂量越高电阻率和少子寿命值在该温度下下降幅度越大,而且随着热处理时间的延长,辐照样品电阻率不断下降,通过间隙氧含量的测量也初步证明电阻率的下降与间隙氧原子的偏聚有关,该温度下电阻率的下降与辐照相关联。
The samples of n-type [111] crystal silicon were irradiated by electrons and then subjected to conventional heat treatment at different temperatures. The lifetime and the resistivity of samples with different irradiation doses were compared with annealing temperature. The results show that the electrical resistivity of Czochralski silicon single crystal samples increases with the increase of electron irradiation, while the decrease of the life span of fewer children decreases. The heat treatment at different temperatures showed that the heat treatment temperature was below 600 ℃ and the life span of the young children was basically stable. When the annealing temperature reached 650 ℃, the resistivity and the minority carrier lifetime of the irradiated samples returned to the initial values before irradiation. It shows that the defects induced by irradiation are basically eliminated at this temperature, and the conductivity of the crystal is gradually restored. However, after heat treatment at 750 ℃, the lifetime and the resistivity of minority carriers of the irradiated samples showed a trough. The higher the irradiation dose, the larger the decreasing rate of resistivity and minority carrier life at this temperature. With the extension of heat treatment time, As the resistivity of the sample declines continuously, the decrease of the resistivity also proves that the decrease of the resistivity is related to the segregation of interstitial oxygen atoms. The decrease of the resistivity at this temperature is related to the irradiation.