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本文具体分析了体硅SCR(晶闸管)和SOI SCR的抗静电特性,利用软件Sentaurus对埋氧层3μm,顶层硅1.5μm的SOI衬底上的SCR进行了工艺和性能仿真,仿真结果达到了4.5kV的抗静电能力,符合目前人体模型的标准2KV。研究发现,注入剂量(9*13-8*14cm-2)增加会引起触发电压减小,维持电压升高;Trench长度(0.8-1.1μm)增加,器件触发电压几乎不变,维持电压降低;场氧化层长度(2-4.5μm)增加,触发电压和维持电压均增加。
In this paper, the antistatic characteristics of bulk silicon SCR and SOI SCR were analyzed in detail. The SCR and process performance of SOI substrate with 3μm buried layer and 1.5μm top layer silicon were simulated by software Sentaurus. The simulation results reached 4.5 kV antistatic capacity, in line with the current standard 2KV mannequin. The results show that the increase of implant voltage (9 * 13-8 * 14cm-2) leads to the decrease of the trigger voltage and the increase of the sustain voltage. The increase of Trench length (0.8-1.1μm) Field oxide length (2-4.5μm) increases, both the trigger voltage and the sustain voltage increase.