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利用射频反应性溅射沉积技术在掺Sn的In2 O3导电透明膜(ITO)衬底上制备了钙钛矿型Pb(Zr,Ti)O3(PZT)铁电薄膜 .研究了沉积参量与热处理工艺对铁电薄膜结构和性能的影响 .运用X射线衍射、X射线光电子能谱和扫描电镜等技术 ,分析了薄膜的晶体结构、表面形貌和表面元素化学状态 .测量了不同处理条件下薄膜的铁电性能 .结果表明 :在掺Sn的In2 O3导电透明膜衬底上可以得到表面无裂纹、化学计量比符合要求的PZT薄膜 ;薄膜中晶粒均匀分布 ,平均尺寸约 2 50nm ,呈四方状和三角状 ;溅射气氛中氧含量和退火温度对薄膜结构、化学计量比和铁电性能都有明显影响 .
A perovskite-type Pb (Zr, Ti) O3 (PZT) ferroelectric thin film was deposited on a Sn-doped In2 O3 transparent conductive film (ITO) substrate by radio frequency reactive sputtering deposition.The deposition parameters and the heat treatment process On the structure and properties of the ferroelectric thin films were studied.The crystal structure, surface morphology and surface chemical state of the thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy.The influence of different conditions Ferroelectric properties.The results show that the PZT thin films with no crack and stoichiometric ratio can be obtained on Sn-doped In 2 O 3 transparent conductive film substrate.The grains in the film are uniformly distributed with an average size of about 250 nm, And triangular. The oxygen content and annealing temperature in the sputtering atmosphere have obvious influence on the film structure, stoichiometry and ferroelectric properties.