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实验研究了非晶态As2S8半导体薄膜在光照、退火-光照和退火-光照-退火-光照关连作用下的光折变效应及淀积态与退火态两种膜系光致体积变化现象·采用棱镜耦合技术、Raman光谱和X线衍射测试技术,确认了As2S8薄膜经紫外光辐照后薄膜密度增高、折射率增大的现象·实验表明,淀积态As2S8薄膜经紫外光照后,折射率变化的最大增量可达到0.06,而退火态As2S8薄膜经紫外光照射后,其折射率最大变化比前者要小一个数量级,约为0.0057·淀积态和退火态两种膜系紫外光照后,体积缩小,这与As2S3非晶态薄膜的情况不同,体积变化率分别为-3.5%和-2.1%·实验还显示,退火态的As2S8薄膜存在折射率完全可逆现象·
The photorefractive effect of amorphous As2S8 semiconductor thin film under photoluminescence, annealing-illumination and annealing-illumination-annealing-illumination was experimentally investigated and the photoluminescence change of the two films was observed. Coupling technique, Raman spectroscopy and X-ray diffraction were used to confirm the increase of the density and the increase of the refractive index of the As2S8 film after it was irradiated by ultraviolet light. The experimental results show that the refractive index of the as-deposited As2S8 film changes after UV irradiation The maximum increment can reach 0.06, and the maximum refractive index change of annealed As2S8 thin film is one order of magnitude smaller than the former, about 0.0057 · The volume of the As2S8 thin film is reduced after the deposited and annealed UV light , Which is different from the case of As2S3 amorphous film, the volume change rates are -3.5% and -2.1% respectively. Experiments also show that the refractive index completely reversible phenomenon exists in the annealed As2S8 film