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利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%.
The growth of GaN: Mg thin films on sapphire substrate by metal organic chemical vapor deposition (CVD) technique was used to optimize the properties of GaN: Mg materials with different source flows.The results show that the crystallinity of CPM and TMGa (CP2Mg) / [TMGa]) in the range of 1.4 × 10-3-2.5 × 10-3, the crystal quality increases and the hole concentration increases linearly with [CP2Mg] / [TMGa] ] / [TMGa] is 2.5 × 10 -3, the hole concentration obtained is comparable to that obtained at a higher temperature, and the surface of the film is rougher. [CP2Mg] / [TMGa] is 2.5 × 10 -3 The light-emitting diode fabricated with p-type GaN layer showed a 17.2% increase in output light intensity at an injection current of 20 mA.