论文部分内容阅读
为了研究一种无荧光粉的单芯片白光发光二极管(LED)的光电性质,实际测量了它的升温电致发光光谱和升温电流-电压(I-V)特性,并测量了相似结构的蓝光LED以作对比。实验发现白光LED的电致发光光谱中有一个与有源区中的深能级相关的较宽的长波长发光峰,根据这个发光峰的强度与温度之间的依赖关系,通过数据拟合,得到了深能级的平均激活能,约为199 meV。由于有源区中存在大量深能级,也对白光LED的I-V特性产生一定影响,有源区中的深能级成为额外的载流子源,使白光LED的I-V特性表现出独特的性质。
In order to study the photoelectric properties of a phosphor-free single-chip white light-emitting diode (LED), its temperature-rising electroluminescence spectrum and temperature-rising current-voltage (IV) characteristics were measured. A similar structure of blue LED Compared. The experimental results show that there is a broad long-wavelength emission peak in the electroluminescence spectrum of the white LED which is related to the deep level in the active region. According to the dependence of the intensity and the temperature of the emission peak, The average activation energy of the deep level is obtained, which is about 199 meV. Due to the existence of a large number of deep levels in the active region, the I-V characteristics of the white LED also have an impact. The deep level in the active region becomes an additional carrier source, which makes the I-V characteristics of the white LED display unique properties.