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A high microwave performance enhancement-mode (E-mode) In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si-doped In0.49Ga0.51P interfacial layer is fabricated.A 0.8-μm-gatelength In0.4Ga0.6As MOSFET with a 5-nm Al2O3 dielectric layer provides a current gain cutoff frequency of 16.7 GHz and a maximum oscillation frequency of 52 GHz.A semi-empirical small-signal-parameter extraction technique accounting for the low frequency anomaly of this MOSFET device is described,which is based on onwafer S-parameter measurements.Excellent agreement between measured and simulated scattering parameters as well as the physically realistic circuit elements demonstrates the validity of this approach.