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由于自身的特点,通常制备供TEM分析用超薄样品的方法,不适合于NISi_2外延单晶薄膜.为此,提出了一种新的适合于NiSi_2外延单晶薄膜TEM分析样品的制备方法——两步局部化学减薄法.这一方法也适用于制备硅薄膜的TEM分析样品.
Due to its own characteristics, it is usually not suitable for NISi_2 epitaxial single crystal thin film for the TEM analysis of ultrathin samples.Therefore, a new method for the preparation of NiSi_2 epitaxial single crystal thin film TEM analysis samples is proposed - Two-step local chemical reduction method This method is also suitable for preparing TEM analysis samples of silicon thin films.