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根据磷化铟晶片的清洗机理,进行了三组磷化铟晶片清洗实验,并使用原子力显微镜(AFM)、表面分析仪和X射线光电子能谱(XPS)对晶片的化学成分、表面粗糙度及均匀性进行了表征,最终确定了氧化-酸剥离的磷化铟清洗工艺,并对清洗过程中晶片表面雾值变化进行研究。结果表明,清洗后的磷化铟晶片表面粗糙度达到0.12 nm,优于国外磷化铟晶片(0.15~0.17 nm)。XPS测试结果显示晶片表面形成了富铟层,富铟层降低了磷化铟晶片表面化学活性,起到了表面稳定作用,提高了外延生长质量。
According to the cleaning mechanism of indium phosphide, three groups of indium phosphide wafer cleaning experiments were carried out, and the chemical composition, surface roughness and surface roughness of the wafer were analyzed using atomic force microscope (AFM), surface analyzer and X-ray photoelectron spectroscopy The homogenization was characterized. Finally, the indium phosphide cleaning process of oxidation - acid stripping was determined, and the change of the haze value on the wafer surface during the cleaning process was studied. The results show that the surface roughness of indium phosphide after cleaning is 0.12 nm, which is better than that of indium phosphide (0.15 ~ 0.17 nm). XPS results show that the indium-rich layer is formed on the surface of the wafer, and the indium-rich layer reduces the chemical activity of the surface of the indium phosphide wafer, stabilizes the surface, and improves the quality of epitaxial growth.