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提出了一种测定材料湿法刻蚀启动时长的红外热成像新方法.该方法的实质是利用反应启动时必然有化学热吸收或释放,从而引起材料表面液膜温度变化这一特点,通过红外热成像实时监测系统,采集液膜温度变化过程的红外热像,从而判断反应启动时长.实验发现,2mm宽线形液膜是较为理想的监测对象,因其同时具备温度变化信息和空间分布信息,可以将线形液膜中心作为理想的观测特征点;由滑动液滴形成残留线形液膜可以得到超浅液膜,温度变化灵敏度高,GaAs竖直放置,可以避免液膜重力对启动时长的影响,获得更为准确的监测数据.在本实验条件下,由线形液膜的横向剖面灰度变化得到GaAs材料与H2SO4:H2O2:H2O(=5:1:50和15:3:50)腐蚀液的反应启动时长分别约为0.2s和0.3~0.4s之间.该方法的提出,对于快速刻蚀技术以及固-液吸附等性能研究均具有重要价值.
A new method of infrared thermography to measure the start-up time of material wet etching is proposed.The essence of this method is to use the chemical heat absorption or release when the reaction starts, which causes the liquid film temperature change on the surface of the material, Thermal imaging real-time monitoring system to collect the infrared thermography of the liquid film temperature change process to determine the reaction start-up time.Experiments found that 2mm wide linear liquid film is an ideal monitoring object, because of its temperature change information and spatial distribution of information, The linear liquid film center can be regarded as the ideal observation feature point. The superfine liquid film can be obtained by forming the residual liquid film by sliding droplets. The temperature change sensitivity is high and GaAs is placed vertically to avoid the influence of the liquid film gravity on the start- Get more accurate monitoring data.In this experiment, the GaAs material and the H2SO4: H2O2: H2O (= 5: 1: 50 and 15: 3: 50) The reaction start-up time is about 0.2s and 0.3 ~ 0.4s respectively.The proposed method is of great value for the research of rapid etching technology and the study of solid-liquid adsorption.