Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition technique,used particularly for improving the etched sidewall where the re-deposition is able to accumulate.This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product.The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution.The traditional,additional cleaning process step used to remove the re-deposition material is not required anymore,so this reduces the overall processing time.The technique is demonstrated on an Al2O3-TiC substrate by C4F8 plasma,and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms,suggesting that it is a C F polymer re-deposition.