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研究了几种消除LEC GaAs材料的位错措施以降低温度梯度从而尽可能降低晶体的热应力。掺入等电子In或Si使杂质硬化,为了抑制晶体表面产生位错,开发了全液封切克劳斯基(FEC)晶体生长技术。结合以上三种技术开发出了Si和In双掺FEC GaAs单晶生长技术以消除位错。采用此技术已生长出半导体低位错密度的GaAs晶体,经证实这种掺Si和In低位错GaAs衬底可以满足GaAs LED制作。
Several dislocations to eliminate LEC GaAs material have been investigated to reduce the temperature gradient to minimize the thermal stress of the crystal. The incorporation of an electron such as In or Si hardens the impurities, and in order to suppress dislocations on the crystal surface, a full liquid seal Czochralski (FEC) crystal growth technique has been developed. Combined with the above three technologies, Si and In double-doped FEC GaAs single crystal growth technologies have been developed to eliminate dislocations. GaAs crystals with low dislocation density have been grown by this technique. This GaAs LED with Si and In doped dislocated GaAs substrates is proved to be suitable for GaAs LED fabrication.