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研发了一种通过MOSFET的超薄栅氧化物分析直接隧穿电流密度的模型。采用Wentzel-Kramers-Brilliouin(WKB)近似计算了隧穿概率,利用清晰的表面势方程改进模型的准确性。在研究模型中考虑了Si衬底中反型层的量子化和多晶硅栅耗尽,还研究了多晶硅掺杂对栅氧化层隧穿电流的影响。仿真结果表明,栅氧化层隧穿电流随多晶硅栅掺杂浓度的增加而增加。该结论与已报道的结果相吻合,从而证明了该模型的正确性。
Developed a model for analyzing the direct tunneling current density through the ultra-thin gate oxide of the MOSFET. Wentzel-Kramers-Brilliouin (WKB) was used to approximate the tunneling probabilities and the model accuracy was improved by using a clear surface potential equation. Considering the quantization of the inversion layer and the depletion of the polysilicon gate in the Si substrate, the effect of polysilicon doping on the tunneling current of the gate oxide was also studied. The simulation results show that the gate oxide tunneling current increases with the polysilicon gate doping concentration. The conclusion is consistent with the reported results, which proves the correctness of the model.