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本文用国产仪器完成了电导法的测量装置,对氯化氢氧化的硅样品测量结果表明,能够可靠地获得界面态密度几乘 10~9cm~(-2)·eV~(-1)的测量数据和相应的俘获截面. 已知,N型衬底MOS电容中界面态的等效并联电导G_p为:
In this paper, a measuring device of conductance method was completed with domestic instruments. The measurement results of silicon chloride oxidized by silicon chloride show that the measured data of interface state density can be obtained reliably by multiplying 10 ~ 9cm ~ (-2) · eV ~ (-1) The corresponding capture cross-section.It is known that the equivalent parallel conductance G_p of the interface state in the N-type substrate MOS capacitor is: