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高功率脉冲磁控溅射(HPPMS)以其在真空镀膜上更大的优势而越来越受到重视,高压大电流电源是实现HPPMS的关键因素。本文研制了1000 A高功率脉冲磁控溅射电源,给出了电源框架图和主电路拓扑结构图。对脉冲部分采用仿真分析探索大模块IGBT的不均流因素,结果表明驱动一致性是影响均流的关键原因之一;分析了大电流时IGBT两端电压过冲问题,采用RCD吸收和续流回路能有效抑制电压过冲,使电压过冲在正常安全范围内。用所研制的电源进行等离子体负载实验,运行良好,为性能优异薄膜的制备奠定硬件基础。
High-power pulsed magnetron sputtering (HPPMS) is gaining more and more attention due to its advantages in vacuum coating. High-voltage and high-current power supply is the key factor to realize HPPMS. This paper developed a 1000 A high-power pulsed magnetron sputtering power supply, power supply frame diagram and the main circuit topology. The pulse part of the simulation analysis to explore the large module IGBT uneven flow of factors, the results show that driving consistency is one of the key factors affecting the current sharing; analysis of large current IGBT voltage overshoot at both ends, the use of RCD absorption and freewheeling Circuit can effectively suppress the voltage overshoot, the voltage overshoot in the normal safety range. Using the developed power supply for plasma load experiments, it runs well and lays the hardware foundation for the preparation of excellent performance thin films.