论文部分内容阅读
日本三菱电机的LSI研究所采用内匹配技术研制1GHz下输出功率100W、增益为4dB的微波静电感应晶体管(SIT)获得成功,在1981年11月召开的日本电子通信学会电子器件研究会上发表了这项成果。在进行器件设计时,为了降低影响高频特性的每单位源长的漏-栅电容,首先使图形制作得更微细,电极条宽为2μm,电极间距为1μm,栅间距为6μm。此外,为了避免热集中,整个晶体管被分成几个单胞配置,芯片尺寸约4×1.2mm,设计指标为:在1GHz下能输出50W。
Japan's Mitsubishi Electric LSI Institute of Technology using internal matching 1GHz at 100W output power, gain of 4dB microwave electrostatic induction transistor (SIT) was successful, held in November 1981, Japan Institute of Electronics and Electronic Devices Research Council presented this Results. In designing the device, in order to reduce the drain-gate capacitance per unit length of the source that affects the high-frequency characteristics, first, the pattern is made finer, with an electrode strip width of 2 μm, an electrode pitch of 1 μm and a gate pitch of 6 μm. In addition, in order to avoid heat concentration, the entire transistor is divided into several single cell configuration, the chip size of about 4 × 1.2mm, design specifications are: at 1GHz can output 50W.