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研究了伽马(γ)射线辐照对星上定标用硅光电二极管性能的影响。使用硅光电二极管分别接受20 krad(Si)、35 krad(Si)、50 krad(Si)总剂量的γ射线辐照,对比了器件在不同辐照剂量下暗电流及光谱响应度的变化。结果显示在35 krad(Si)以下剂量照射下,硅光电二极管暗电流及光谱响应度均未发现明显的变化,在50 krad(Si)剂量照射下,参试样品出现暗电流增加的现象,但该变化在定标器应用过程中带来的影响可以忽略。试验结果表明,参试的硅光电二极管在空间辐照环境下具有良好的稳定性及可靠性,可以作为在轨定标器可见波段探测单元备选器件。
The effect of gamma (γ) radiation on the performance of a silicon photodiode for on-board calibration was investigated. The silicon photodiodes were irradiated by γ-rays at a total dose of 20 krad (Si), 35 krad (Si) and 50 krad (Si), respectively. The dark current and spectral responsivity of the devices under different irradiation doses were compared. The results show that under the irradiation dose of 35 krad (Si), there is no obvious change in the dark current and spectral responsivity of the silicon photodiode. Under the irradiation of 50 krad (Si) dose, the dark current increases, However, the impact of this change on the scaler application can be neglected. The experimental results show that the tested silicon photodiode has good stability and reliability in space radiation environment and can be used as an alternative device for the detection unit of visible band in on-orbit scalar.