Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm~2V~(-1)s~(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm~2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm~2V~(-1)s~(-1)(average mobility 1.2 cm~2V~(-1)s~(-1)) and 3.0 cm~2V~(-1)s~(-1)(average mobility2.0 cm~2V~(-1)s~(-1)), respectively. They both have a high on/off ratio(I_(on)/I_(off))>10~9. The performance can well satisfy the requirements for light-emitting diodes driving. Organic field-effect transistors (OFETs) based on organic micro- / nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm ~ 2V -1 s -1, demonstrating great potential for high-performance, low- cost organic electronic applications. However, fabrication of large-area organic micro- / nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9 (Phenylethynyl) anthracene (BPEA) and 6,13-bis (triisopropylsilylethynyl) pentacene (TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm ~ 2 wafer substrate with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropria te metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm ~ 2V -1 s -1 (average mobility 1.2 cm ~ 2V -1 s -1) ) and 3.0 cm ~ 2V -1 s -1 (average mobility 2.0 cm ~ 2V -1 s -1), respectively. They both have a high on / off ratio ( I_ (on) / I_ (off))> 10 ~ 9. The performance can satisfy the requirements for light-emitting diodes driving.