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采用磁增强反应离子刻蚀（ＭＥＲＩＥ）工艺获得了铁电ＰｂＺｒ０５３Ｔｉ０４７Ｏ３（ＰＺＴ）薄膜的微细图形．研究了用ＣＨＦ３ 气体在不同射频功率和气体流量下ＰＺＴ薄膜、Ｐｔ和ＡＺ１４５０Ｊ光刻胶的刻蚀速率以及刻蚀选择性的实验规律．原子力显微镜（ＡＦＭ）结果表明，获得的ＰＺＴ薄膜图形具有较高的各向异性．化学分析电子能谱（ＥＳＣＡ）结果表明，在ＣＨＦ３ 等离子体中Ｐｔ表面形成了一层碳氟聚合物薄膜，它对Ｐｔ 的刻蚀起到钝化和保护的作用，并且最后可以在３００℃热处理３０ｍ ｉｎ 被消除．
The micro-patterning of ferroelectric PbZr053Ti047O3 (PZT) thin films was obtained by using magnetic enhanced reactive ion etching (MERIE). The experimental results of etching rate and etching selectivity of PZT thin films, Pt and AZ1450J photoresists with CHF3 gas at different RF power and gas flow rates were studied. Atomic force microscopy (AFM) results show that the obtained PZT film has high anisotropy. The results of ESCA showed that a film of fluorocarbon polymer was formed on Pt surface in CHF3 plasma, which could passivate and protect the Pt from being etched, and finally could be heat-treated at 300 ℃ 30m in is eliminated.