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研究了低温缓冲层对在GaAs(001)衬底上用分子束外延(MBE)生长ZnTe薄膜晶体质量的影响。发现插入低温缓冲层后ZnTe的结晶质量、表面形貌和发光质量都得到了显著的提高,双晶X射线摇摆曲线(DCXRC)的ZnTe(004)衍射峰半峰宽(FWHM)从529 arcsec减小到421 arcsec,表面均方根(RMS)粗糙度从6.05 nm下降到3.93 nm。而作为对比,插入高温缓冲层并不能对ZnTe薄膜的质量起到改善作用。基本上实现了优化工艺的目标并为研制ZnTe基光电器件微结构材料奠定了很好的实验基础。
The effect of low temperature buffer layer on the quality of ZnTe thin films grown by molecular beam epitaxy (MBE) on GaAs (001) substrates was investigated. The results show that the crystal quality, surface morphology and luminescence of ZnTe are obviously improved after the low temperature buffer layer is inserted. FWHM of the ZnTe (004) diffraction peak of the double crystal X-ray rocking curve (DCXRC) decreases from 529 arcsec As small as 421 arcsec, the surface root mean square (RMS) roughness decreased from 6.05 nm to 3.93 nm. In contrast, the insertion of a high temperature buffer does not improve the quality of the ZnTe film. Basically achieved the goal of optimizing technology and laid a good experimental foundation for the development of microstructure materials of ZnTe-based optoelectronic devices.