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生长在蓝宝石C面上的ZnO薄膜是通过等离子体金属有机物化学汽相淀积方法获得的 ,由其X光衍射得知 ,生长过程中分段退火和最后退火在薄膜中分别引入了张应力和压应力。通过对样品光致发光光谱研究表明 :分段退火样品在 380nm附近出现了单一激子发射峰 ,而最后退火样品却出现了与应变有关的Γ5和Γ6两激子发射峰 ,同时在两者的光致发光光谱中与深能级有关的荧光峰都未出现。
Growth of ZnO thin films on the sapphire C surface is obtained by plasma metal organic chemical vapor deposition method, from its X-ray diffraction that the growth of the sub-annealing and the final annealing in the film were introduced tensile stress and Compressive stress. The photoluminescence (PL) spectra of the samples show that there is a single exciton emission near 380 nm in the segmented annealed samples, and the two annealed peaks of Γ5 and Γ6 appear in the final annealed samples. None of the fluorescence peaks associated with deep levels in the photoluminescence spectrum appears.