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制备了以TaYON作为钝化层,以HfTiON作为高k栅介质的Ge MOS电容。研究了NH_3和N_2等离子体处理TaYON对界面特性的影响。结果表明,N_2和NH_3等离子体处理可以有效改善器件的界面及电性能,其中,NH_3等离子体处理的效果更好,可获得更高的k值(25.9)、更低的界面态密度(6.72×10~(11) eV-1·cm~(-2))和等效氧化物电荷密度(-9.43×10~(11) cm~(-2)),以及更小的栅极漏电流(5.18×10~(-5) A/cm~2@V_g=1V+V_(fb))。原因在于NH3等离子体分解产生的N原子或H原子以及NH基团能有效钝化界面附近的悬挂键和缺陷态,防止GeO_x低k界面层的形成,N原子的结合也增加了介质的热稳定性。
Ge MOS capacitors with TaYON as the passivation layer and HfTiON as the high-k gate dielectric were prepared. The effect of Ta_ON treated by NH_3 and N_2 plasma on the interfacial properties was studied. The results show that N_2 and NH_3 plasma treatment can effectively improve the interfacial and electrical properties of the device. Among them, the effect of NH_3 plasma treatment is better, higher k value (25.9), lower interface state density (6.72 × (11) eV-1 · cm -2 and equivalent oxide charge density (-9.4 × 10-11 cm -2), as well as the smaller gate leakage current (5.18 × 10 ~ (-5) A / cm ~ 2 @ V_g = 1V + V_ (fb)). The reason is that N atoms or H atoms and NH groups generated by NH3 plasma decomposition can passivate the dangling bonds and defect states near the interface effectively and prevent the formation of GeO_x low-k interface layer. The binding of N atoms also increases the thermal stability of the medium Sex.