从热力学角度对 L PE中同时存在的 Si氧化与 Si O2 腐蚀的动态平衡过程进行了分析 ,表明在 Si的低温同质液相外延中 ,一般的 L PE条件很难解决防止 Si的氧化问题 .作者尝试采用饱和 Sn源保护 Si衬底的方法来解决硅氧化问题 ,通过对外延层表面形貌和成分的分析研究 ,表明采用 Sn源保护成功地解决了硅的氧化问题 . The dynamic balance of Si oxidation and Si O2 corrosion simultaneously existing in L PE was analyzed from the viewpoint of thermodynamics. It is indicated that the general L PE condition is hard to solve the problem of preventing the oxidation of Si in the low-temperature homogenous liquid phase epitaxy of Si. The author attempts to solve the problem of silicon oxidation by using a saturated Sn source to protect the Si substrate. The analysis of surface topography and composition of the epitaxial layer shows that the oxidation of silicon is successfully solved by using Sn source protection.