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本发明提供一种确定HgCdTe衬底中金属空位浓度的方法。该方法的实施步骤为:在HgCdTe衬底上压盖一层富碲的CdTe,然后在足以支持富碲CdTe层与HgCdTe衬底之间互相扩散的温度下对该衬底进行退火。此外,本发明还提供了一种制作本征掺杂p型
The present invention provides a method of determining the concentration of metal vacancies in a HgCdTe substrate. The method is implemented by capping a layer of tellurium-rich CdTe on a HgCdTe substrate and then annealing the substrate at a temperature sufficient to support mutual diffusion between the tellurium-rich CdTe layer and the HgCdTe substrate. In addition, the present invention also provides a method of making an intrinsic doped p-type