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以高纯度铝作为溅射靶材,高纯度氩气作为溅射气体,在低温环境下利用直流磁控溅射设备在硅衬底上成功制备了铝膜。通过单一因素控制法研究了溅射功率、腔室压强和基片转速三个关键因素对铝膜的均匀性、致密性和附着性的影响。采用台阶仪、扫描电子显微镜(SEM)等测试设备以及磷酸腐蚀速率法、胶带法等测试方法对铝膜质量进行了表征与分析,得出了不同工艺参数与铝膜的均匀性、致密性和附着性的关系,并且对结果进行了优化。实验结果表明:溅射功率和腔室压强影响铝膜的均匀性、致密性和附着性;基片转速影响铝膜的均匀性和附着性,并得到了各因素对铝膜质量的影响趋势及影响机理。最终得到制备铝膜的最优工艺参数为溅射功率300 W、腔室压强3.7×10-3 Torr(1 Torr=133.3 Pa)、基片转速6 r/min。
Using high-purity aluminum as sputtering target and high-purity argon as sputtering gas, aluminum film was successfully prepared on silicon substrate by DC magnetron sputtering equipment under low temperature. The single factor control method was used to study the influence of sputtering power, chamber pressure and substrate speed on the uniformity, compactness and adhesion of aluminum film. The quality of the aluminum film was characterized and analyzed by testing equipment such as stepper and scanning electron microscope (SEM), phosphoric acid corrosion rate method and tape method. The results showed that the uniformity and compactness of aluminum film with different process parameters Adhesion, and the results were optimized. The experimental results show that sputtering power and chamber pressure affect the homogeneity, compactness and adhesion of the aluminum film. The substrate speed affects the uniformity and adhesion of the aluminum film, and the effect of various factors on the quality of the aluminum film. Impact mechanism. The optimum process parameters for the final preparation of aluminum film were sputtering power of 300 W, chamber pressure of 3.7 × 10 -3 Torr (1 Torr = 133.3 Pa) and substrate rotation speed of 6 r / min.