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分析了工业级Flash存储器件应用于空间电子产品时应考虑的温变规律和机理,并在-35~105℃的温度条件下对韩国三星公司生产的大容量Flash存储器件K9××G08U×D系列进行了温循试验和高温步进应力试验,以评估其空间应用的可行性。试验结果显示:这一系列存储器在温度变化的情况下,电性能参数会发生规律性变化,其中页编程时间随温度的升高线性增大,105℃比-35℃时页编程时间增加15%;块擦除时间在低温条件下明显增大。在-35℃低温条件下,块擦除时间比常温条件高出72%,在105℃高温条件下,块擦除时间比常温条件高出10%。试验表明Flash K9××G08U×D系列存储器能够在-35~105℃的环境下工作,器件可正常擦写读,坏块没有增加。页编程时间随着温度的增加而增加,但是,仍然在器件的最大页编程时间之内。但是,在低温环境下,擦除时间会明显增加,在空间应用时需为擦除操作预留足够的时间。
The temperature change law and mechanism which should be considered in the application of industrial grade Flash memory device to space electronic products are analyzed. The high-capacity flash memory device K9 ×× G08U × D produced by Samsung of South Korea under the temperature of -35 ~ 105 ℃ is analyzed. Series of temperature-cycle test and high-temperature step-stress test to assess the feasibility of its spatial applications. The experimental results show that the electrical parameters will change regularly when the temperature changes. The page programming time increases linearly with the increase of temperature, and the page programming time increases by 15% at 105 ℃ compared with -35 ℃, ; Block erase time significantly increased at low temperatures. At -35 ℃ low temperature conditions, the block erase time 72% higher than room temperature conditions, 105 ℃ high temperature conditions, block erase time higher than room temperature conditions by 10%. The test shows Flash K9 × × G08U × D series of memory can work in the -35 ~ 105 ℃ environment, the device can be erase read normal, no increase in bad blocks. Page programming time increases with increasing temperature, however, it is still within the maximum page programming time for the device. However, the erasing time is significantly increased in low temperature environments, leaving sufficient time for the erasing operation in space applications.