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设计了一种简化的铝栅MOS半导体器件制作工艺流程,用6张掩模版成功制作出了基于表面电场效应原理的生物检测硅芯片传感器,采用SiO2-Si3N4复合栅介质层及耗尽型器件结构,以增强器件的识别与检测灵敏度。该传感器与常规铝栅MOS晶体管相比,去除了介质层表面的栅极导电层,代之以自组装技术制作生物薄膜并辅以栅参考电极作为控制栅极。用所制作的硅芯片传感器检测了相关生物蛋白质的电流响应,给出了该电流响应与器件沟道长度和沟道电阻及生物蛋白浓度等参数的关系,得到了较为满意的检测数据,达到了预期的基于表面电场效应的硅传感器制作和生物检测的目的。
A simplified aluminum gate MOS semiconductor device fabrication process was designed. The biosensor silicon chip sensor based on the surface electric field effect principle was successfully fabricated with six reticle plates. The SiO2-Si3N4 composite gate dielectric layer and depletion device structure , In order to enhance the recognition and detection sensitivity of the device. Compared with the conventional aluminum gate MOS transistor, the sensor removes the gate conductive layer on the surface of the dielectric layer and replaces it with a self-assembly technique to fabricate a biofilm with a gate reference electrode as a control gate. The fabricated silicon chip sensor was used to detect the current response of the relevant biological proteins. The relationship between the current response and the device channel length, channel resistance and biological protein concentration was obtained. Satisfactory detection data were obtained, The intended purpose of silicon sensor fabrication and bioassay based on surface electric field effects.