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随着铜互连结构中低k介质的应用,要求CMP抛光过程中必须将压力减小到6.89kPa以下,传统的化学机械抛光已不符合当前的工艺要求,如何兼顾超低压力下抛光速率和速率一致性成为关键问题。对300mm Blanket铜膜进行了低压化学机械抛光实验,分析研究了碱性抛光液组分及抛光工艺参数对铜膜去除速率及其一致性的影响。通过实验可得,在低压力1kPa,流量200mL/min,转速30r/min,氧化剂体积分数2%,磨料体积分数30%,螯合剂体积分数3%时,抛光速率为330nm/min,表面非均匀性为0.049,抛光后表面粗糙度为0.772nm,得到了较为理想的实验结果。
With the application of low-k dielectric in copper interconnect structure, it is necessary to reduce the pressure to less than 6.89kPa in CMP polishing process. Conventional chemical mechanical polishing has not met the current technological requirements. How to balance the polishing rate under ultra-low pressure and Rate consistency has become a key issue. Low-pressure chemical mechanical polishing experiments on 300mm Blanket copper film were carried out. The effects of the composition and polishing parameters of alkaline polishing solution on copper film removal rate and its consistency were analyzed. The experimental results show that the polishing rate is 330nm / min at a low pressure of 1kPa, a flow rate of 200mL / min, a rotation speed of 30r / min, an oxidizer volume fraction of 2%, an abrasive volume fraction of 30% and a chelating agent volume fraction of 3% The sex is 0.049, the surface roughness after polishing is 0.772nm, and the ideal experimental result is obtained.