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(锇有可能作为大规模集成电路铜互连扩散阻挡层新材料。)利用自制的抛光液对金属锇片进行抛光,研究在双氧水-磷酸体系抛光液中H2O2浓度和抛光液pH值对抛光速率的影响。结果表明,当抛光液中主要成分仅为氧化剂H2O2时,并不能在金属锇表面达到好的腐蚀效果。在磷酸体系抛光液中,H2O2能够通过促进阴极反应的进行从而增强抛光液对金属锇的化学作用;低浓度H2O2通过增强抛光液对金属锇的化学腐蚀能力,从而增加了抛光速率值;较高浓度H2O2的加入对抛光速率值影响较小。H3PO4能够在抛光液中起到抑制剂、pH调节剂和络合剂的作用。当抛光液pH值为4.0时,金属锇表面生成的钝化膜最致密。当pH值为4.0或5.0时,金属锇表面生成的钝化膜OCP值大于金属锇的OCP值,且此条件下的抛光速率值较高。
(Osmium may be used as a new material for the diffusion barrier of copper interconnects in large scale integrated circuits.) Using self-made polishing solution to polish the metal Os plate, the effects of H2O2 concentration and pH value of the polishing solution on the polishing rate Impact. The results show that when the main component of the polishing solution is only the oxidant H2O2, it can not achieve a good corrosion effect on the osmium surface. In the phosphoric acid system polishing solution, H2O2 can enhance the chemical effect of the polishing solution on the osmium metal by promoting the cathode reaction; low concentration of H2O2 increased the polishing rate by increasing the chemical etching ability of the polishing solution to osmium metal; The concentration of H2O2 added has little effect on the polishing rate. H3PO4 acts as a suppressor, pH adjuster, and complexing agent in the polishing solution. When the pH value of the polishing solution is 4.0, the passivation film formed on the surface of osmium metal is the most dense. When the pH value is 4.0 or 5.0, the OCP value of the passivation film formed on the surface of the osmium metal is larger than the OCP value of the osmium metal, and the polishing rate under this condition is higher.