本文从杂质原子在锗硅单晶三个主要晶向的扩散模型着手,对各晶向的扩散系数进行理论推导,得出了扩散系数各向同性的结论;介绍了实验结果,并给出硼在硅单晶三个主要晶向的扩散系数随温度变化的关系曲线;最后探讨了理论与实验偏离的原因. In this paper, the diffusion model of impurity atoms in the three main crystalline orientations of SiGe single crystal is introduced. The diffusion coefficient of each crystal orientation is theoretically deduced, and the conclusion that the diffusion coefficient is isotropic is obtained. The experimental results are given and the boron The relationship between the diffusion coefficient and the temperature in the three main crystalline orientations of the silicon single crystals was discussed. Finally, the reasons for the deviations between theory and experiment were discussed.