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图形化蓝宝石衬底是近年来针对高度发光二极管的应用要求发展起来的一种新技术。通过利用自主研制的工业化感性耦合等离子体刻蚀机对图形化蓝宝石衬底的刻蚀工艺进行了研究。采用光学发射光谱仪和扫描电镜研究了PSS生产过程中腔室状态的变化对蓝宝石的刻蚀速率、选择比和图形形貌的影响。研究结果表明:随着反应腔累积放电时间的增加,刻蚀速率呈现下降趋势,选择比呈先上升然后下降的趋势。该趋势由反应腔室内表面上的沉积物所引起。
Graphical sapphire substrate is a new technology developed in recent years for the application of high light-emitting diodes. The etching process of the patterned sapphire substrate was studied by using an industrial inductively coupled plasma etching machine developed by ourselves. Optical emission spectroscopy and scanning electron microscopy were used to study the effect of cavity state changes on the etch rate, selectivity and morphology of the sapphire during PSS production. The results show that with the increase of the cumulative discharge time in the reaction chamber, the etching rate shows a downward trend and the selectivity ratio first increases and then decreases. This trend is caused by deposits on the interior surface of the reaction chamber.