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主要对分立器件硅衬底化学机械平坦化(CMP)进行了研究。首先通过正交实验方法研究活性剂、螯合剂、磨料浓度和有机碱对硅材料去除速率的影响,得出活性剂体积分数对去除速率的影响最大,并且研究出去除速率最快的抛光液的最优配比,去除速率可以达1 410nm/min。同时平坦化后的硅衬底具有良好的表面状态:表面粗糙度仅为0.469nm,表面总厚度变化小于工业标准指标5μm。在考虑工艺影响的情况下,硅衬底制造双极型晶体管的成品率达到90%以上,满足工业成品率要求。
Mainly on discrete silicon substrate chemical mechanical planarization (CMP) were studied. Firstly, the effects of active agent, chelating agent, abrasive concentration and organic alkali on the removal rate of silicon material were studied by orthogonal experiment. The results showed that the volume fraction of active agent had the strongest influence on the removal rate, and the polishing liquid with the fastest removal rate Optimal ratio, the removal rate can reach 1 410nm / min. At the same time, the planarized silicon substrate has a good surface state: the surface roughness is only 0.469 nm, and the variation of the total surface thickness is smaller than the industry standard index of 5 μm. Taking into account the case of process impact, the silicon substrate manufacturing bipolar transistor yield of 90% or more, to meet the requirements of industrial yield.