为了制备高效多晶硅薄膜太阳电池及其它半导体薄膜光电器件,除了需要选择成膜工艺条件外,还应借助对工艺条件等的控制,实现对膜的电阻率及其剖面分布的有效控制,这在光伏电池及半导体器件研制过程中是很重要的。本工作基于上述目的,在用化学气相沉积法(C.V.D)制备多晶硅薄膜太阳电池过程中,对膜的电阻率及其剖面分布与各种工艺条件的关 In order to prepare high-efficiency polycrystalline silicon thin film solar cells and other semiconductor thin-film optoelectronic devices, in addition to the choice of film-forming process conditions, the control of the process conditions and the like should be used to effectively control the resistivity of the film and its profile distribution. Battery and semiconductor device development process is very important. This work is based on the above purpose, the use of chemical vapor deposition (C. V. D) Preparation of polycrystalline silicon thin film solar cells, the resistivity of the film and its profile and the various process conditions off