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利用中频非平衡磁控溅射技术,以氩气和甲烷混合气体为工作气体,在载玻片和单晶硅片上沉积含氢的类金刚石薄膜。改变加载在基体上的负偏压,在0~400 V范围内,制备5种偏压值下的薄膜,研究偏压对薄膜结构的影响。用光学显微镜和AFM考察薄膜的光学形貌;激光Raman谱定性分析膜的化学组分;FTIR分析其C-H键合类型;纳米压痕法测量膜的硬度。结果表明:当基体上施加偏压-100 V时,可以有效地提高沉积粒子与基体结合力以及薄膜的致密性,薄膜中正四面体的sp3结构和sp3CHn含量增加,纳米硬度提高。
Using IF unbalanced magnetron sputtering technology, a hydrogen-containing DLC film is deposited on glass slides and monocrystalline silicon wafers by using a mixed gas of argon and methane as a working gas. By changing the negative bias voltage applied to the substrate, five kinds of films with different bias voltages were prepared in the range of 0 ~ 400 V to study the influence of bias on the structure of the films. Optical microscopy and AFM were used to examine the optical morphology of the films. Laser Raman spectroscopy was used to qualitatively analyze the chemical composition of the films. FTIR was used to analyze the C-H bonding types. Nanoindentation was used to measure the hardness of films. The results show that when the bias voltage is -100 V, the bonding strength between the deposited particles and the substrate and the densification of the film can be effectively enhanced. The sp3 structure and sp3CHn content of the tetrahedron in the film increase, and the nano-hardness increases.