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采用磁控溅射离子镀技术在贫铀表面以不同基片偏压与不同氩分压制备铝镀层,利用扫描电镜分析了镀层的表面和界面形貌,利用俄歇电子能谱仪分析了界面元素分布,利用透射电镜分析了镀层的微观结构。结果表明:铀表面脉冲偏压所得铝镀层较直流偏压所得镀层致密,脉冲偏压在-500～-1000V范围内镀层的致密性较好。铀表面脉冲偏压铝镀层与铀基体之间界面结合紧密,且存在“伪扩散层”;随着脉冲偏压的提高,“伪扩散层”增宽。铝镀层为柱状结构,降低工作氩分压,可以细化铝镀层的晶粒,提高镀层的致密性。
The magnetron sputter ion plating technique was used to prepare the aluminum coating on the surface of depleted uranium with different substrate bias voltage and different argon partial pressures. The surface and interface morphology of the coating were analyzed by scanning electron microscopy. The interface elements Distribution, the use of transmission electron microscopy analysis of the microstructure of the coating. The results show that the pulsed bias voltage on uranium surface is more dense than that obtained by DC bias. The pulsed bias voltage is in the range of -500 ~ -1000V. Uranium surface pulse bias aluminum coating and uranium matrix interface between the close integration, and the presence of “pseudo-diffusion layer ”; with the pulse bias increased, “pseudo-diffusion layer ” widening. Aluminum plating columnar structure, reducing the work of argon partial pressure, can refine the grain of aluminum coating, improve the compactness of the coating.