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比利时纳米电子器件研究中心Imec近日欲扩展其硅基氮化镓研发项目,联合开发200mm硅基氮化镓外延和增强型器件相关技术。扩展的研发提案包括:开发新型衬底以提升外延层质量,开发新型隔离模块提升集成水平,发展先进垂直器件。Imec乐于与合作伙伴共同投入研发,对新一代氮化镓技术有兴趣的公司或正在寻求目前少量生产的硅基氮化镓器件以开发下一代高效紧凑功率转换器的公司都可以加入。
Imec, Belgium’s nanoelectronic device research center, recently announced plans to expand its silicon-based gallium nitride research and development project to jointly develop technologies for 200-nm Gallium Nitride Epitaxy and Enhanced Devices. The expanded R & D proposals include developing new substrates to enhance the quality of epitaxial layers, developing new isolation modules to enhance integration levels, and developing advanced vertical devices. Imec is pleased to partner with partners in R & D, companies interested in next generation GaN technology, or companies seeking low-volume GaN-based GaN devices to develop the next generation of highly efficient compact power converters.