论文部分内容阅读
为了解决在制程变异的影响下,全芯片漏电流很难被验证的难题,提出了基于新的漏电流模型的统计分析算法。建立了一个亚阈值漏电流模型以及它的参数提取方法。该模型不仅包含了小尺寸器件的量子效应和应力效应,而且能够很好地与实验数据拟合。65 nm工艺节点下由于制程变异而引起的亚阈值漏电流波动表明,主要的变异源为有效沟道长度和阈值电压的变化。模型和对变异源的研究,验证了全芯片漏电流。模拟结果和实际电路测试结果的比较,证明了该算法的正确性和有效性。
In order to solve the difficult problem that full-chip leakage current can not be verified under the influence of process variations, a statistical analysis algorithm based on a new leakage current model is proposed. A subthreshold leakage current model and its parameter extraction method are established. The model not only contains the quantum effects and stress effects of small size devices, but also fits well with the experimental data. The subthreshold leakage current fluctuations due to process variation at the 65 nm process node indicate that the major sources of variation are the effective channel length and the change in threshold voltage. The model and the study of the source of variation verified the full chip leakage current. The simulation results and the actual circuit test results show that the algorithm is correct and effective.