Novel reverse-conducting IGBT(RC-IGBT) with anti-parallel MOS controlled thyristor(MCT) is proposed.Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 m with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J D 150 A/cm2. Novel reverse-conducting IGBT (RC-IGBT) with anti-parallel MOS controlled thyristor (MCT) is proposed. It’s major feature is the introduction of an automatically controlled MCT at the anode, by which the anode effect is eliminated and the voltage snapback problem As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction The voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at JD 150 A / cm2.