本文在IBM-PC计算机上,数值模拟了线性区CMOS磁敏器件,即对垂直于器件表面磁场敏感的劈裂漏极MOSFET,并将其推广到饱和区。针对器件的矩形结构,采用非均匀矩形网格有限差分方法求解了在磁场存在下载流子的输运方程,给出了电压分布,且分析了灵敏度和线性度。计算结果与实验相符。 In this paper, we simulate a linear CMOS CMOS device on a IBM-PC computer, which is a split-drain MOSFET that is sensitive to the magnetic field perpendicular to the surface of the device and extend it to the saturation region. For the rectangular structure of the device, the transport equation of carriers in the presence of magnetic field is solved by the finite difference method of the nonuniform rectangular grid. The voltage distribution is given and the sensitivity and linearity are analyzed. The calculation results are consistent with the experiment.