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利用射频磁控溅射法在Si(111)衬底上溅射ZnO中间层和Ga2O3 薄膜,然后在管式炉中常压下通氨气对ZnO/Ga2O3 薄膜进行氨化,高温下ZnO层在氨气气氛中挥发,而Ga2O3 薄膜和氨气反应合成出GaN纳米线.X射线衍射测量结果表明利用该方法制备的GaN纳米线具有沿c轴方向择优生长的六角纤锌矿结构.利用扫描电子显微镜、透射电子显微镜、傅里叶红外透射谱、能量弥散谱及选区电子衍射观测并分析了样品的形貌、成分和晶格结构.研究发现ZnO层的挥发有利于Ga2O3 和NH3 反应合成GaN纳米线.
ZnO intermediate layer and Ga2O3 thin film were sputtered on Si (111) substrate by radio-frequency magnetron sputtering method, and then the ZnO / Ga2O3 thin films were ammoniated by ammonia in atmospheric pressure in a tube furnace. Ammonia gas volatilization, and Ga2O3 film and ammonia gas reaction of GaN nanowires synthesized by X-ray diffraction measurement results show that the GaN nanowires prepared by this method has a preferential growth along the c-axis hexagonal wurtzite structure using scanning electron The morphology, composition and lattice structure of the samples were observed and analyzed by means of Fourier transform infrared spectroscopy, transmission electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, energy dispersive spectroscopy and selected area electron diffraction.The results show that volatilization of ZnO layer favors the reaction of Ga2O3 and NH3 to synthesize GaN nanostructures line.